A universal sample manipulator with 50 kV negative bias

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Abstract

A manipulator incorporating a number of novel features has been built for a research ion implanter. The system is designed to enable uniform dose implantation of both planar and nonplanar surfaces by incorporating one translational and two rotational degrees of freedom. Negative target bias of up to 50 kV may be applied to the target, thus increasing the ion energy by this amount. The target chamber and all external manipulator controls are grounded. With the exception of the high voltage power supply, cable and feedthrough, all high voltage components are within the vacuum system. A secondary electron suppression cage which can be held at a negative bias of up to 60 kV relative to the chamber (i.e. 10 kV relative to the manipulator) surrounds the manipulator. Performance has been evaluated using 15N ions and nuclear reaction analysis through 15N(p,α)12C to profile ion concentrations for dose uniformity and for ion depth at elevated target potentials.

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