Section XI. Desorption induced by electronic transitionChanneling study of the orientational dependence of laser-induced damage in GaAs and GaP
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Vacancy-initiated laser sputtering from semiconductor surfaces
1993, Nuclear Inst. and Methods in Physics Research, BLaser Induced Modification of n‐GaAs below the Classical Melting Threshold
1990, physica status solidi (a)
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Department of Physics, Moscow State University, Moscow 119899, USSR.
Copyright © 1988 Published by Elsevier B.V.