Low energy antiproton-nucleus annihilation radius selection using an active silicon detector/target

doi:10.1016/0168-9002(86)90689-3

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume 249, Issues 2–3, 10 September 1986, Pages 361-365

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Abstract

The use of an intrinsic silicon transmission detector to experimentally select the annihilation radius of low energy antiprotons in silicon nuclei is described. Through Monte Carlo modeling of the intranuclear and evaporation cascades following the annihilation, the energy deposited in the detector is correlated to the annihilation radius in the silicon nucleus. By selecting events with sufficiently large energy deposition, annihilations occurring on average within the half nuclear density radius are distinguished.

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Cited by (6)

Investigation of silicon sensors for their use as antiproton annihilation detectors
2014, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Citation Excerpt :
This is the first adaptation of a silicon detector for direct measurement of antimatter annihilation. Previous works [5] report the use of silicon as an active annihilation target, but no position resolution was provided in that case. We present new results on the annihilation detection capabilities of three different types of silicon detectors:
We present here a new application of silicon sensors aimed at the direct detection of antinucleons annihilations taking place inside the sensor׳s volume. Such detectors are interesting particularly for the measurement of antimatter properties and will be used as part of the gravity measurement module in the $AE \bar{g} IS$ experiment at the CERN Antiproton Decelerator. One of the goals of the $AE \bar{g} IS$ experiment is to measure the gravitational acceleration of antihydrogen with 1% precision. Three different silicon sensor geometries have been tested with an antiproton beam to investigate their properties as annihilation detection devices: strip planar, 3D pixels and monolithic pixel planar. In all cases we were successfully detecting annihilations taking place in the sensor and we were able to make a first characterization of the clusters and tracks.
Antiproton-neon annihilation at rest and at 607 MeV/c
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The analysis is based upon p̄Ne annihilation events at rest and at 607 MeV/c detected with a self-shunted streamer chamber exposed to the LEAR beams. The main measured quantities are the following: charged-prong multiplicity, negative pion multiplicity; momentum, angular and rapidity distributions. General distributions are given as well as distributions as functions of charged prong multiplicity. A correlation is found between high multiplicity and depth of the annihilation point. The data are compared with recent theoretical analyses.
Comparison of planar and 3d silicon pixel sensors used for detection of low energy antiprotons
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Annihilation of low energy antiprotons in silicon sensors
2013, IEEE Nuclear Science Symposium Conference Record
Measuring the antihydrogen fall
2009, Hyperfine Interactions

^∗: Permanent address:Soreq Nuclear Research Center,Yavne 70600,Israel.

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Low energy antiproton-nucleus annihilation radius selection using an active silicon detector/target

Abstract

Phys. Lett.

Nucl. Instr. and Meth.

Phys. Rev. Lett.