Radiation damage studies of amorphous-silicon photodiode sensors for applications in radiotherapy X-ray imaging

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Abstract

The high radiation tolerance of hydrogenated amorphous silicon (a-Si:H) is one reason it has become a candidate for high-energy physics applications and for radiotherapy and diagnostic imaging. The performance of 1 μm and 5 μm a-Si:H n-i-p photodiode sensors used in conjunction with Lanex (Gd2O2S:Tb) intensifying screens has been measured as a function of high-energy photon dose. Over the course of irradiation with a 60Co source to a total dose of ∼104 Gy the output signal due to the sensor-screen combinations experienced maximum variations of −1.3% and +2.7% for the 1 μm and 5 μm sensors, respectively. Transient effects associated with the sensors and screens are also reported.

References (10)

  • V. Perez-Mendez et al.

    Nucl. Instr. and Meth.

    (1988)
  • I.D. French et al.

    Appl. Phys.

    (1983)
  • C.E. Byvik et al.
  • J.J. Hanak et al.
  • L.E. Antonuk et al.

    IEEE Trans. Nucl. Sci. NS-37

    (1990)
There are more references available in the full text version of this article.

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∗

Permanent Address: Department of Radiation of Oncology, University of Pittsburgh, USA.

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Copyright © 1990 Published by Elsevier B.V.