Germanium microstrip detectors with 50 and 100 μm pitch
References (6)
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Addendum to proposal P170
CERN/SPSC/82-83/SPSC/P170/add.1
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Cited by (5)
Inter-electrode charge collection in high-purity germanium detectors with amorphous semiconductor contacts
2015, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentCitation Excerpt :A typical solution involving conventional, impurity-based contacts includes an etching or cutting step to eliminate the low-resistivity material between electrodes. For ion-implanted contacts, standard lithographic and etching processes can be successfully used [10–12]. However, the thicker Li-diffused contact poses a greater challenge because it is not conducive to standard etch processes.
Leakage current in high-purity germanium detectors with amorphous semiconductor contacts
2015, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentCitation Excerpt :In such detectors, the position measurement is often achieved by dividing or segmenting the electrical contacts into many strips or pixels and then reading out the signals from each of the contact segments. The conventional B implanted contact can be readily segmented [5–8]. However, the Li-diffused contact presents a challenge for segmentation as a result of its thickness and significant diffusion of Li at room temperature [9,10].
Photomask technique for fabricating high purity germanium strip detectors
1990, Nuclear Inst. and Methods in Physics Research, ASemiconductor detectors
2011, Experimental Techniques in Nuclear PhysicsSemiconductor particle tracking detectors
1994, Reports on Progress in Physics