Elsevier

Nuclear Physics A

Volume 227, Issue 2, 22 July 1974, Pages 284-290
Nuclear Physics A

Transitions électromagnétiques dans le noyau 32Si atteint par la réaction 30Si(t, pγ)32Si

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Abstract

The γ-decay of 32Si levels was studied in the 30Si(t, p)32Si reaction at Et = 2.5, 2.9 and 3.3 MeV. Coincident DSA measurements and p-γ angular correlations (method II) yield excitation energies, branching and mixing ratios, spins and mean lifetimes. The levels at 1.94 and 5.29 MeV have Jπ = 2+ and 3() and τm = 0.48 ± 0.07 and 0.17 ± 0.04 ps, respectively; for six other levels lifetime limits are given. The 5.41, 5.95, 6.19, 6.39 and 6.71 MeV levels have J = 1, 2, 1, 2 and 1, respectively; the latter level has not been observed before. Most of the results are in good agreement with previous data.

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