Use of a semiconductor detector in anomalous (resonance) X-ray scattering measurement of local structure of an amorphous alloy

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Abstract

Anomalous (resonance) X-ray scattering is a powerful technique to determine the compositionally resolved local structure of disordered materials, such as liquids or amorphous solids. However, a very high accuracy of measurements is required for the succesful application of this technique and the removal of the fluorescent radiation from the sample is crucial in achieving the necessary accuracy. We show that this can be done satisfactorily using an energy sensitive semiconductor detecor.

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Permanent address: Research Institute of Mineral Dressing and Metallurgy (SENKEN), Tohoku University, Sendai 980, Japan.

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