Measurements of point defect creation related to high densities of electronic excitations produced by energetic carbon cluster bombardments
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Low energy C<inf>n</inf> cluster ion induced damage effects in Si(1 0 0) substrates
2007, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :Such an interaction produces localized lattice damages which one can not see with a monomer ion with comparable energy. With increase in cluster size there can be a nonlinear lattice damage buildup which has been studied at both keV and MeV energies with various ion target combinations. [4–11] One of the earlier works using cluster ions was by Perez et al. [4] where C3 and C5 clusters at 1.74 MeV/atom were used to create point defects in LiF.
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