Defect creation in tracks produced by high energy carbon clusters in LiF

https://doi.org/10.1016/0168-583X(94)96213-8Get rights and content

Abstract

LiF single crystals have been bombarded at room temperature with 3 and C5 clusters with energies of 1.74 MeV/carbon atom and fluences ranging from 1012 to 1014 carbon atoms/cm2. Point defects (color centers: F, F2 etc.) resulting from electronic excitation processes were measured by optical absorption spectroscopy. The defect concentrations were compared to those produced by irradiations with single 12C ions with the respective energy and dose. Also using a differential optical absorption technique, it was possible to determine the defect concentrations close to the sample surface, when the tracks associated to each carbon atom of the cluster overlap. In this zone where the “cluster effect” is maximum due to the very high density of electronic excitations, enhanced defect production is observed. Defect concentrations as large as those obtained previously by Kr and Xe irradiations at GANIL have been measured. In addition to the high production rates of defects observed, aggregation laws (i.e. F → F2) characteristic of cluster irradiations are also deduced.

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