Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors

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Abstract

In a previous paper measurements were reported of two-photon absorption (TPA) in the narrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process.

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Cited by (4)

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    1996, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • Research with FELIX

    1994, Nuclear Inst. and Methods in Physics Research, A
  • Nonlinear absorption in indium arsenide

    1997, Physical Review B - Condensed Matter and Materials Physics
  • The CLIO infrared FEL facility

    1996, Synchrotron Radiation News
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