Abstract
IT was first pointed out by Frank1 that the termination of screw dislocations in a crystal face would produce steps, by the propagation of which crystal growth could take place. Such steps would obviate the need for two-dimensional nucleation and thus allow crystal growth to proceed at considerably lower supersaturations than those required to form two-dimensional nuclei. Frank predicted that the presence of an isolated dislocation on a close-packed crystal face would allow this to grow ad infinitum in the form of an ascending spiral. This prediction was afterwards substantiated experimentally by observations of crystals grown both from the vapour and from solution. The spirals of silicon carbide grown from the vapour by Verma2, and those of cadmium iodide grown from solution by Forty3 may be quoted as examples.
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References
Frank, F. C., Disc. Farad. Soc., No. 5, 48 (1948).
Verma, A. R., “Crystal Growth and Dislocations” (Butterworths Sci. Pub., 1953).
Forty, A. J., Phil. Mag., 42, 670 (1952).
Raub, E., Metalloberfläche, A., 7, 17 (1953).
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PICK, H. Growth Spirals in Electrodeposited Copper. Nature 176, 693 (1955). https://doi.org/10.1038/176693a0
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DOI: https://doi.org/10.1038/176693a0
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