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Digitale Medien

Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si (1987)

Harith, M. A. ; Zhang, J. P. ; Campisano, S. U. ; [weitere]

Springer

Applied physics 42 (1987), S. 35-39

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Details

ISSN: 1432-0630

Schlagwort(e): 61.10 ; 68.55 ; 81.10

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00618156

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