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Digitale Medien

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes (2001)

Marinelli, C. ; Bordovsky, M. ; Sargent, L. J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 4076-4078

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 μm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 μm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%–38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1424061

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