Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3882-3884
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Cross-sectional scanning tunneling microscopy was used to identify individual Al atoms on cleaved surfaces of two sets of (AlGa)As heterostructure samples grown with metalorganic vapor-phase epitaxy and molecular-beam epitaxy. We determined the average Al concentration profile perpendicular to the GaAs–(AlGa)As interfaces. Based on former investigations of short-range ordering in (AlGa)As bulk material grown with metalorganic vapor-phase epitaxy, we conclude that short-range ordering during growth of the interfacial layers contributes significantly to the observed interface roughness. © 2000 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.126808
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