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Digitale Medien

Interface engineering with pseudormorphic interlayers: Ge metal-insulator-semiconductor structures (1990)

Hattangady, S. V. ; Fountain, G. G. ; Rudder, R. A. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 581-584

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Significant improvements in gating of Ge surfaces are achieved with the use of thin, pseudomorphic Si interlayers. Metal-insulator-semiconductor structures with mid-gap interface state densities of 5×1010 cm−2 eV−1 and showing no hysteresis have been realized on both n- and p-type Ge. The key elements of this technology are: surface cleaning, deposition of a thin Si interlayer, and the deposition of the gate dielectric, SiO2, all of which are performed in situ and sequentially at 300 °C in a single chamber with the remote plasma technique. Ion scattering spectroscopy shows complete coverage of the Ge surface by the Si layer. X-ray photoelectron spectroscopy shows the Si interlayer is about 18 A(ring) thick. The Si interlayer prevents the interfacial oxidation of the underlying Ge.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.104247

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