ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
We have tested the radiation detection performance of Silicon Carbide (SiC) PIN diodesoriginally developed as high power diodes. These devices consist of 100 micron thick SiC grownepitaxially on SiC substrates. The size and thickness of the devices make them appropriate for anumber of radiation detection applications. We tested 0.25 cm2 and 0.5 cm2 devices and obtainedX-ray spectra under illumination with an Am-241 radioactive source. The spectra showed an energyresolution that was consistent with the resolution expected for the large capacitance of the device.Smaller devices with a diameter of 1 mm were also tested and produced spectra with a roomtemperature energy resolution of ~550 eV, which is consistent with the electronics limit for thecapacitance of the small device. We measured the absolute charge generated by X-rays per KeV inSiC by comparing the charge generation with similar silicon devices and determined the energyrequired per electron hole pair in SiC to be 8.4 eV. We also performed radiation damage tests onthese devices and found no significant loss in charge collection up to a photon dose of 100 MRad.Applications for these devices can be found in the fields of particle physics, nuclear physics,nuclear medicine, X-ray fluorescence, X-ray astronomy and X-ray navigation
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1465.pdf
