ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
We performed high-pressure H2O vapor annealing on 4H-SiC n-MOS capacitors tocontrol SiO2/4H-SiC interface properties. High-pressure H2O annealing was performed at 270~420oC at a pressure of 1.31~1.67MPa. Effective negative fixed oxide charge decreased withincreasing anneal temperature in the case annealed with Al gate electrodes. However, it increasedwith increasing anneal temperature in the case annealed without Al gate electrodes. The effect ofannealing was much larger on the C-face than that of Si-face. Interface state densities near theconduction band edge was decreased at 420oC under 1.67MPa compared to other samples,especially on the C-face n-MOS capacitors
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.663.pdf