Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2863-2865
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A quantitative determination of the contribution of As self-interstitials to the As self-diffusion coefficient in GaAs has been carried out. Values of the As self-interstitial contributions are deduced from sulfur indiffusion profiles in GaAs, which are simulated based on the kick-out mechanism. Furthermore, the relative contributions of As self-interstitials and of As vacancies are discussed. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114810
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |