Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 5215-5231
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A detailed dynamical analysis of an all solid-state THz source is given. This is based on the polarization-induced autonomous oscillation in resonant tunneling heterostructure with staggered band-gap alignment. The physical model consists of the following processes: (a) Generation by Zener tunneling of holes trapped in the barrier and electrons drifting in the depletion layer of the drain, whose rate decreases with the polarization between the barrier and quantum well. (b) Stimulated generation of barrier-well polarization. (c) Nonradiative decay of barrier-well polarization through barrier-hole recombination and quantum-well electron discharge. It is shown that a limit cycle oscillation of the barrier-well polarization and trapped-hole charge in the barrier can occur which induce THz oscillations in the resonant tunneling current across the device. The time-averaged results agree with the measured current–voltage characteristic of AlGaSb/InAs/AlGaSb staggered band-gap double-barrier structure. In particular, the measured smaller current offset at forward bias compared to that of reverse bias in the current–voltage hysteresis loop is predicted by our physical model and limit cycle analysis. Thus, we have experimental evidence indicating the correctness of our approach and the promising potential of this device as a novel all solid-state THz source. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371503
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