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X-ray photoelectron spectroscopic studies on silicon carbide from rice husk (1989)

Patel, M.

New York, NY [u.a.] : Wiley-Blackwell

X-Ray Spectrometry 18 (1989), S. 215-218

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ISSN: 0049-8246

Keywords: Chemistry ; Analytical Chemistry and Spectroscopy

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Physics

Notes: The surface structure of silicon carbide whiskers, produced from rice husk at 1500-1800°C, was examined by x-ray photoelectron spectroscopy. An ESCA survey scan of the surface showed Si, C, O and F to be present; Si in the form of SiCx and SiOx and C in the form of SiCx and CHx. On sputtering the sample, the SiOx and CHx species were reduced and the SiCx level increased. The photoelectron spectra are presented.

Additional Material: 8 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/xrs.1300180507

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