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Investigation of cross-contamination during Si-implantion in GaAs with SIMS (1988)

Meuris, M. ; Vandervorst, W. ; Maes, H. E.

Chichester [u.a.] : Wiley-Blackwell

Surface and Interface Analysis 12 (1988), S. 339-343

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ISSN: 0142-2421

Keywords: Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Physics

Notes: The contamination of Si-implantation in GaAs was analysed with SIMS. This was done by measuring the molecules composed of the ‘contamination-atoms’ and the matrix atoms. It was concluded that there exists a co-implantation of 14N15, 10B19F, 11B18O up to 40% of the dose for the 29Si-implantation in the worst case and 20% of 14N2 for the 28Si-implantation. Electrical measurements and a residual gas analysis confirmed these results. A good mass separation for the implanter was found.

Additional Material: 8 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/sia.740120604

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