ISSN:
0142-2421
Keywords:
SIMS
;
deconvolution
;
depth resolution
;
boron
;
silicon
;
separability
;
confidence level
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS profiles of boron-doped layers in silicon.The real SIMS profiles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at oblique incidence. It is shown that two layers that are completely convolved by the SIMS experiment can be completely separated. In order to try to solve the problem of reliability of the deconvolution results, a confidence level is defined, which indicates the level below which the deconvolved profile should not be taken into account. Moreover, a parameter defined previously is used to define whether a satisfying solution of the deconvolution problem exists or not. This parameter is applied to the experimental profiles.The simulated profiles are chosen so that they correspond to real cases encountered by the SIMS analysts and clarify what can be expected from the method. Several characteristic features are examined, such as the separability of Gaussian functions or the dynamic range of the deconvolution of rising or falling functions. It is shown that the minimum distance between two delta layers that can be separated using 3.5 keV/O2+ primary beam SIMS analysis at oblique incidence is equal to 60 Å, and that abrupt error functions and exponential functions can be retrieved very satisfactorily. © 1997 John Wiley & Sons, Ltd.
Additional Material:
14 Ill.
Type of Medium:
Electronic Resource
