ISSN:
0020-7608
Keywords:
Computational Chemistry and Molecular Modeling
;
Atomic, Molecular and Optical Physics
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
The primary purpose of the present paper consists in obtaining a correction to Dingle's potential for a (point) impurity ion (embedded) in Si or Ge. This goal is accomplished by making use of a variational principle in taking into account the effect of the spatial variation of the dielectric constant in the respective medium. It is found that the resulting impurity-ion potential can be represented as the product of Dingle's potential and a factor which, with increasing distance from the charged impurity, approaches unity. The secondary purpose of the present paper consists in suggesting a way for the modification of an impurity-ion potential that has been obtained previously with a boundary condition, that, in retrospect, is open to criticism. It is shown that the modified impurity-ion potential can be represented as the product of the author's previous potential and a factor which, with increasing distance from the charged impurity, approaches unity.
Additional Material:
2 Tab.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/qua.560130207
