ISSN:
0020-7608
Keywords:
Computational Chemistry and Molecular Modeling
;
Atomic, Molecular and Optical Physics
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
In this paper a variational principle has been formulated for obtaining an approximate solution of Poisson's equation for the potential of a donor ion embedded in Si. A comparison of a two parameter approximate analytical potential with the exact numerical potential shows excellent agreement for several electron concentrations. It is also found that the present theory, using the concept of a “spatially variable dielectric constant,” leads to a donor-ion potential which deviates significantly from the potential of Dingle, which has been the traditional starting point of calculations of electron mobility limited by ionized-impurity scattering.
Additional Material:
2 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/qua.560190522
