ISSN:
0894-3370
Keywords:
Engineering
;
Electrical and Electronics Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
The diffusion of Zn into a GaAs crystal is modelled using numerical techniques similar to those of Zahari and Tuck.1 This technique does not directly solve any differential equations, the physical processes are directly modelled. The diffusion of Zn is assumed to be by the kick-out mechanism. In this mechanism the Zn atoms diffuse into the crystal interstitially with a constant diffusion coefficient. The interstitial Zn atoms transfer to the substitutional lattice site by kicking out a Ga atom. The incorporation of the Zn atoms on to the lattice sites is assumed to take place at a rate much greater than the diffusion of the interstitial Zn. The diffusion of the generated Ga interstitial is also contained in the model. The effect on the Zn concentration profile and Ga interstitial concentration of varying both the Ga interstitial diffusivity and equilibrium concentration has been examined. Finally, the implications of these results on Zn induced disordering of GaAs/AlAs superlattices is discussed.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/jnm.1660030205
