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Laser stimulated etching of n-GaAs (1989)

Švorčík, V. ; Rybka, V. ; Myslík, V.

Springer

Czechoslovak journal of physics 39 (1989), S. 1042-1047

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ISSN: 1572-9486

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract The HeNe laser stimulated etching of n-GaAs in aqueous solution of H2SO4/H2O2 mixture and alcali hydroxides was studied. The effects of laser power density as well as on the composition and concentration of etching solutions on photoetching was examined. In addition, a theoretical model of semiconductor etching in hydroxides is suggested.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01597930

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