ISSN:
1573-9120
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A topographic noise model of a bipolar transistor developed by the authors is used to study the current gain, distributed base resistance, and noise-voltage spectral density as functions of emitter topography. The contradictory opinions concerning the choice of the electrical and structural parameters of low-noise transistors are pointed out. It is established that bipolar transistors with minimal base resistance obtained by complication of the emitter topology have the best noise characteristics at elevated operating currents and frequencies. At low frequencies and currents the advantage is held by topographies that maximize the area-to-perimeter ratio of the emitter region-in particular, transistors with an annular emitter and a central base contact. The results of theoretical studies are confirmed experimentally.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01039714
