ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Infrared and Raman analyses on the configuration of hydrogenated amorphous carbon (a-C∶H) thin films on monocrystalline Ge and Si substrates have been carried out. Models of the short range order and of the non-equilibrium crystallization aggregation of the films are proposed based on the analysis results and previous works by Smith [1, 2], Lu and Wang [3] and Witten and Sander [4]. The computer simulated aggregates, according to the models, are fractals with the dimension 1.81±0.06. The films have been crystallized by laser illustration quenching. The fractal dimension of the experimentally obtained aggregates is in agreement with the simulation result.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00570082