ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract An etching and electron microscopy study has been carried out on {111} oriented slices of gallium phosphide (GaP) taken from Czochralski-grown ingots. The correlation of the etched structure with substructural defects as revealed by transmission electron microscopy has been determined, It has been found that GaP grown by this technique has a high dislocation density and exhibits polygonisation and mechanical twinning. It is found that there is a one-to-one correspondence between surface etch pits and grown-in and mechanically induced dislocations. Stacking faults are also revealed in the etching studies and are shown to be twins in the matrix of the {111} 〈112〉 type. It is proposed that the twinning occurs due to the severe growth conditions and may arise by dissociation of dislocations in the sub-boundaries.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00574857
