ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The impurity composition of gallium arsenide slabs has been investigated using the highly sensitive method of neutron-activation analysis. The content of Se, Cr, Ag, Fe, Zn, Co, and Sb in the slabs as well as variations of the content of these impurities for different batches of slabs were determined. It is shown that neutron-activation analysis can be used, together with layerwise chemical etching, to study the volume distribution of impurity elements in gallium-arsenide-based semiconductor structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187174