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Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum (1997)

Kiselev, V. A. ; Polisadin, S. V. ; Postnikov, A. V.

Springer

Semiconductors 31 (1997), S. 704-706

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ISSN: 1063-7826

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract The optical constants of layers of porous silicon in the range 600–800 nm have been determined and the effect of vacuum thermal annealing on them has been investigated. The variation of the complex index of refraction is attributed to the desorption of reagents and products of electricochemical treatment of the silicon. It was determined that the temperature coefficient of the variation of the reflection of a layer of porous silicon on heating up to 600 °C does not exceed 10−6 at a wavelength of 633 nm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1187071

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