ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Capacitance methods are used to investigate Schottky diodes formed on the basis of epitaxial n-type 6H-SiC layers grown by vapor-phase epitaxy. It is found that the height of the potential barrier and its dependence on the work function of the metal strongly depend on the method used for surface treatment of the semiconductor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187802