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  • 1
    Electronic Resource
    Electronic Resource
    Varistor effect in semiconductor ferroelectrics (1997)
    Springer
    Technical physics 42 (1997), S. 1390-1394 
    Details
    ISSN: 1090-6525
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper treats the effect of an external field on the magnitude of potential barriers and the potential contour near a charged boundary between crystallites in polycrystalline ferroelectric semiconductors. It is shown that this effect depends on the mutual directions of the external field and the polarization in the ferroelectric bulk, and that the appearance of various types of nonlinear dependences of the current on voltage in polycrystalline ferroelectrics can be explained by the transfer of charge carriers in the fields of potential barriers with different profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1258883
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