ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Laser structures based on broken-gap type II p-GaInAsSb/n-InGaAsSb heterojunctions in the active region are proposed and studied. Lasing at 3.2–3.4 μm has been obtained in the temperature range 77–195 K with a threshold current density of 400 A/cm2 at 77 K and a characteristic temperature T0=47 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1261568