ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-wavelength emission in the InGaAsN quantum wells is obtained in the wavelength range up to 1.32 μm at room temperature. The effect of the InGaAsN quantum parameters on the optical properties of heterostructures is studied.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1262873