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  • 1
    Electronic Resource
    Electronic Resource
    Development of depressions and voids during LPE growth of GaAs (1978)
    Springer
    Applied physics 15 (1978), S. 243-252 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Lm ; 68.55+b ; 61.70.Jc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depressions and voids, morphological defects which are frequently encountered in LPE-layers of III–V compounds, are described. Their development is discussed for GaAs LPE layers exhibiting facet growth as well as terrace growth. Experimental conditions for the growth of depression- and void-free layers are specified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896103
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