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On the density of localized levels in amorphous silicon (1979)

Hoffmann, H. -J.

Springer

Applied physics 18 (1979), S. 427-429

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ISSN: 1432-0630

Keywords: 71.20 ; 71.55 ; 72.80

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00899699

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