ISSN:
1432-0630
Keywords:
68.55.+b
;
64.70.Kb
;
66.30.Ny
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract 2 MeV4He+ backscattering spectrometry and CuK α x-ray diffraction were used to study CoSi2 formed by annealing at temperatures between 405° and 500 °C from CoSi with evaporated Si films. A laterally uniform layer of CoSi2 forms, in contrast to the laterally nonuniform CoSi2 layer that is obtained on single crystal Si substrates. The thickness of the CoSi2 film formed is proportional to the square root of time at a fixed temperature. The activation energy of this reaction is about 2.3 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616581