ISSN:
1432-0630
Keywords:
81.40
;
82.30
;
82.80
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract To study the initial reaction steps of hydrogen, oxygen, and water, on differently prepared single crystal surfaces of silicon, germanium/silicon alloys, indium phosphide and gallium arsenide, we used high-resolution electron energy-loss spectroscopy (HREELS) in combination with low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Very recently, we started a program on the hydrogenation of III–V compound semiconductors, and on the oxidation of Si and III–V compound semiconductors, using alkali metals as a catalyst. This paper summarizes the present stage of our investigations, describing in particular aspects of the microscopic structure of differently prepared semiconductor surfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324310
