ISSN:
1432-0630
Keywords:
68.35
;
68.45
;
85.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The capacitance and voltage characteristics of field effect transistors passivated by BaF2-B2O3-GeO2-SiO2 glasses with various water contents were investigated. As the OH absorption coefficients of the glass increased, adverse effects on the recovery of hysteresisC-V curve shifts was seen. The water content is related to the fluoride content of the BaF2−B2O3−GeO2−SiO2 glass. The viscous flow point of the glass was lowered with increasing ionic character obtained from Hannay's equation. The source-drain current and voltage (I-V) characteristics of typical enhancement and depletion mode field effect transistors passivated with these glasses were investigated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01540111
