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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 64 (1997), S. 497-499 
    ISSN: 1432-0630
    Keywords: PACS: 85.30.De;85.40.Ls;73.40.Cg;73.40.Jn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: + -Si/Ti/WNx/Al multi-layer metallization scheme. The contact resistance has been strongly related to the plasma nitridation of the Ti surface because the contact resistance of n+-Si/Ti/WNx/Al with contact size of 0.49 μm2 about 100–130 Ω, whereas without the nitridation of the Ti surface the contact resistance rises up to 200–390 Ω. 19F (p,αγ) nuclear resonance analysis and Auger electron spectroscopy reveal that F adatoms on the Ti surface are successfully removed by the 30 s nitridation and as a result, the low contact resistance can be achieved.
    Type of Medium: Electronic Resource
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