ISSN:
1432-0630
Keywords:
PACS: 68.55; 81.15 Z
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO2 was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO2(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10-2 mbar. The best crystal quality was obtained at around 3×10-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050803
