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Raman-scattering spectrum of GaN straight nanowires (2000)

Li, J.Y. ; Chen, X.L. ; Cao, Y.G. ; [et al.]

Springer

Applied physics 71 (2000), S. 345-346

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ISSN: 1432-0630

Keywords: PACS: 81.05.Ea; 42.65.Dr

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract. The Raman spectrum of GaN straight nanowires deposited on a LaAlO3 crystal substrate was studied. The E2 (high) phonon frequency at 560 cm-1 shows a 9 cm-1 shift compared with the calculated value. The low-energy shift and band broadening of the Raman modes result from the nanosize effect. The unique property of the low intensity ratio of IE2/IA1(LO) on the Raman spectrum from the GaN straight nanowires was observed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s003390000602

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