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Atomic surrounding of Co implanted in AlN at high energy (2001)

Traverse, A. ; Delobbe, A. ; Zanghi, D. ; [et al.]

Chester : International Union of Crystallography (IUCr)

Journal of synchrotron radiation 8 (2001), S. 514-516

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ISSN: 1600-5775

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Geosciences , Physics

Notes: AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions, X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1107/S0909049500012632

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