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Formation and decay mechanisms of electron–hole pairs in amorphous SiO2 (2002)

Uchino, T. ; Takahashi, M. ; Yoko, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 1147-1149

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present theoretical evidence for the creation of an electron–hole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electron–hole pair consists of a nonbridging oxygen hole center and an E′ center, but these paramagnetic defects do not form a close pair but are separately located by over ∼4 Å. The subsequent decay mechanism along with the related radiolytic process is also discussed. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1448173

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