ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The lattice distortion and the transmuted-Ge related luminescence in neutron-transmutation-doped (NTD) GaN are studied by combining Rutherford backscattering spectroscopy/channeling, Raman scattering, and photoluminescence methods. The lattice displacement of Ga atoms of ∼0.12 Å from the 〈0001〉 row is estimated from the normalized angular yield profiles, preserving the single crystallinity in as-irradiated GaN with a minimum yield (χmin) of 7%. A 2.84 eV emission band observed in 600 °C annealed NTD-GaN is associated with the Ga interstitial, supporting the lattice distortion. Two emission bands at 2.90 eV and 2.25 eV observed in 1000 °C annealed NTD-GaN are assigned to a negatively charged DX-like center of Ge at Ga site and a complex defect attributed to Ge at Ga site and Ga vacancy, respectively. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1477269
