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Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy (2002)

Takano, Y. ; Kobayashi, K. ; Iwahori, H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2054-2056

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: InGaAs layers with In composition of 0.57 were grown with metalorganic vapor phase epitaxy (MOVPE) using graded buffer layers on exactly oriented and misoriented GaAs(100) substrates. No mirror-like surface was obtained at growth temperatures between 570 °C and 630 °C. A mirror-like surface was achieved at a growth temperature of 450 °C. The threading dislocation density in the layer grown at 450 °C on the GaAs substrate misoriented toward (111)A was determined to be 1×107 cm−2 using transmission electron microscopy. Photoluminescence results also confirmed that the density of recombination centers in layers grown at 450 °C was low. Low temperature growth with MOVPE was found to be effective in InGaAs layers on GaAs substrates with high In composition above 0.4. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1463210

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