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Han, Daxing ; Yue, Guozhen ; Wang, Keda ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 40-42

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A large redshift of the photoluminescence (PL) peak energy is found in hydrogenated amorphous silicon films prepared by hot-wire chemical-vapor deposition with a high-growth rate ≥50 Å/s. The PL intensity is as high as that in the standard film and its temperature dependence shows thermalization behavior. The origin of the redshift is clarified by employing 1H nuclear magnetic resonance and mass density measurements. A ∼2% volume fraction of tube-like nanoscale voids is identified. The long spin-lattice relaxation time of H2 in the nanovoids implies a negligible density of silicon dangling bonds on the nanovoid surfaces. We suggest that highly strained bonds on these surfaces form broad conduction-band tail states that are responsible for the PL redshift. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1431396

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