Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 1243-1245
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured photoluminescence spectra of molecular-beam-epitaxy-grown cubic GaN/InxGa1−xN/GaN double heterostructures with x between 0.09 and 0.33. We observe a luminescence peak at about 2.3–2.4 eV which is almost independent of the InGaN layer composition. High-resolution x-ray diffraction measurements revealed a pseudomorphic In-rich phase with x=0.56±0.02 embedded in the InGaN layers. Including strain effects we calculate a gap energy Eg=2.13 eV of this phase. In cubic InGaN, spontaneous polarization and strain-induced piezoelectric fields are negligible. Therefore, the observed difference between the luminescence energy and the gap of the In-rich phase is assumed to be due to the localization of excitons at quantum-dot-like structures with a size of about 15 nm. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1396314
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