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Temporal evolution of GaSb/GaAs quantum dot formation (2001)

Müller-Kirsch, L. ; Heitz, R. ; Pohl, U. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 1027-1029

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The formation of GaSb quantum dots in a GaAs matrix in the Stranski–Krastanow growth mode under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopical images and photoluminescence measurements show the islands to nucleate during the GaSb deposition and to grow subsequently by mass transfer from the two-dimensional wetting layer. The evolving surface morphology indicates local equilibria between quantum dots and the surrounding wetting layer regions. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1394715

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